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  <titleInfo>
    <title>VLSI FABRICATION PRINCIPLES</title>
    <subTitle>SILICON AND  BALLIOM ARSENIDE</subTitle>
  </titleInfo>
  <name type="personal">
    <namePart>GHANDI, SARAB K.</namePart>
    <role>
      <roleTerm authority="marcrelator" type="text">creator</roleTerm>
    </role>
  </name>
  <typeOfResource/>
  <originInfo>
    <place>
      <placeTerm type="text">NEW YORK</placeTerm>
    </place>
    <publisher>JOHN WILEY</publisher>
    <dateIssued>1983</dateIssued>
    <issuance/>
  </originInfo>
  <language>
    <languageTerm authority="iso639-2b" type="code">spa</languageTerm>
  </language>
  <physicalDescription>
    <extent>X, 665 P. 15 CM.</extent>
  </physicalDescription>
  <note type="statement of responsibility">S.K. GHANDI.</note>
  <note>INCLUYE BIBLIOGRAFIA E INDICE.</note>
  <note>1</note>
  <subject>
    <topic>1.CIRCUITOS INTEGRADOS(VLSI)</topic>
  </subject>
  <subject>
    <topic>2.ARSENITO  DE GALIO</topic>
  </subject>
  <subject>
    <topic>3.SILICIO</topic>
  </subject>
  <classification authority="ddc">621.38171 G43</classification>
  <identifier type="isbn">0-471-86833-7</identifier>
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    <recordContentSource authority="marcorg">ITTG </recordContentSource>
    <recordCreationDate encoding="marc">241215</recordCreationDate>
    <recordChangeDate encoding="iso8601">20250115011731.0</recordChangeDate>
    <recordIdentifier source="OSt">ITTG4461</recordIdentifier>
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